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t february 1999 this document contains information on a new product. specifications and information herein are subject to change without notice . 2.4.99 )6 9&;2&orfn*hqhudwru,& $gydqfh,qirupdwlrq ,62 1.0 features on-chip tunable voltage-controlled crystal oscillator circuitry (vcxo) allows precise system frequency tuning (pull range typically 300ppm) vcxo tuning range: 0-3v uses inexpensive fundamental-mode crystals integrated phase-locked loop (pll) multiplies vcxo frequency to the higher system frequencies needed 5v supply voltage (contact factory for 3.3v) small circuit board footprint (8-pin 0.150 2 soic) custom frequency selections available - contact your local ami sales representative for more information figure 1: pin configuration 1 8 2 3 4 7 6 5 xin vdd xtune vss vss vdd clk xout fs6127 8-pin (0.150 2 ) soic 2.0 description the fs6127 is a monolithic cmos clock generator ic designed to minimize cost and component count in digital video/audio systems. at the core of the fs6127 is circuitry that implements a voltage-controlled crystal oscillator when an external resonator (nominally 13.5mhz) is attached. the vcxo allows device frequencies to be precisely adjusted for use in systems that have frequency matching requirements, such as digital satellite receivers. a high-resolution phase-locked loop generates the output clock frequency (clk). the clk frequency is phase- locked and frequency-locked to the vcxo frequency. table 1: crystal / output frequencies device f xin (mhz) clk (mhz) FS6127-01 13.5 27 note: contact ami for custom pll frequencies and 3.3 volt versions figure 2: block diagram vcxo fs6127 pll xout xin clk xtune
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t february 1999 2 2.4.99 )6 9 &;2 &orfn*hqhudwru,& $gydqfh,qirupdwlrq ,62 table 2: pin descriptions key: ai = analog input; ao = analog output; di = digital input; di u = input with internal pull-up; di d = input with internal pull-down; dio = digital input/output; di-3 = three-level digital input, do = digital output; p = power/ground; # = active low pin pin type name description 1 ai xin vcxo crystal feedback 2 p vdd power supply (+5v) 3 ai xtune vcxo tune 4 p vss ground 5 do clk clock output 6 p vdd power supply (+5v) 7 p vss ground 8 ao xout vcxo crystal drive 3.0 functional block description 3.1 phase-locked loop (pll) the on-chip pll is a standard frequency- and phase- locked loop architecture. the pll multiplies the reference oscillator to the desired frequency by a ratio of integers. the frequency multiplication is exact with a zero synthe- sis error. 3.2 voltage-controlled crystal oscillator (vcxo) the vcxo provides a tunable, low-jitter frequency refer- ence for the rest of the fs6127 system components. loading capacitance for the crystal is internal to the fs6127. no external components (other than the crystal resonator itself) are required for operation of the vcxo. continuous fine-tuning of the vcxo frequency is accom- plished by varying the voltage on the xtune pin. the total change (from one extreme to the other) in effective loading capacitance is t.b.d. nominal. the oscillator operates the crystal resonator in the paral- lel-resonant mode. crystal warping, or the pulling of the crystal oscillation frequency, is accomplished by altering the effective load capacitance presented to the crystal by the oscillator circuit. the actual amount that changing the load capacitance alters the oscillator frequency will be dependent on the characteristics of the crystal as well as the oscillator circuit itself. specifically, the motional capacitance of the crystal (usu- ally referred to by crystal manufacturers as c 1 ), the static capacitance of the crystal (c 0 ), and the load capacitance (c l ) of the oscillator determine the warping or pulling capability of the crystal in the oscillator circuit. a simple formula to obtain the warping capability of a crystal oscillator is: () ()() c c c c c c c ppm f l l l l 1 0 2 0 6 1 2 1 2 10 ) ( + + - = d where c l1 and c l2 are the two extremes of the applied load capacitance. example: a crystal with the following parameters is used. with c 1 = 0.02pf, c 0 = 5pf, c l1 = 10pf, and c l2 = 22.66pf, the tuning range is () ()() ppm . . . f 305 10 5 66 22 5 2 10 6 10 66 22 02 0 = + + - = d .
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t february 1999 3 2.4.99 $gydqfh,qirupdwlrq )6 9&;2&orfn*hqhudwru,& ,62 4.0 electrical specifications table 3: absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. these conditions represent a stress rating only, and functional operation of the device at these or any other conditions above the operational limits noted in this specification is not implied. exposure to maximum rati ng conditions for extended conditions may affect device performance, functionality, and reliability. parameter symbol min. max. units supply voltage (v ss = ground) v dd v ss -0.5 7 v input voltage, dc v i v ss -0.5 v dd +0.5 v output voltage, dc v o v ss -0.5 v dd +0.5 v input clamp current, dc (v i < 0 or v i > v dd )i ik -50 50 ma output clamp current, dc (v i < 0 or v i > v dd )i ok -50 50 ma storage temperature range (non-condensing) t s -65 150 c ambient temperature range, under bias t a -55 125 c junction temperature t j 125 c lead temperature (soldering, 10s) 260 c input static discharge voltage protection (mil-std 883e, method 3015.7) 2 kv caution: electrostatic sensitive device permanent damage resulting in a loss of functionality or performance may occur if this device is subjected to a high-energy ele c- trostatic discharge. table 4: operating conditions parameter symbol conditions/description min. typ. max. units supply voltage v dd 5v 10% 4.75 5 5.25 v ambient operating temperature range t a 070c
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t february 1999 4 2.4.99 )6 9 &;2 &orfn*hqhudwru,& $gydqfh,qirupdwlrq ,62 table 5: dc electrical specifications unless otherwise stated, v dd = 5v 10%, no load on any output, and ambient temperature range t a = 0c to 70c. parameters denoted with an asterisk ( * ) represent nominal characterization data and are not production tested to any specific limits. where given, min and max characterization data are 3 s from typical. negative currents indicate current flows out of the device. parameter symbol conditions/description min. typ. max. units overall supply current, dynamic, with loaded outputs i dd f xtal = 13.5mhz; c l = 10pf 20 ma voltage controlled crystal oscillator crystal resonator frequency f xtal fundamental mode 10 13.5 15 mhz crystal loading capacitance c l(xtal) as seen by a crystal connected to xin and xout (@ v xtune = 1.65v) 14 pf crystal resonator motional capacitance c 1(xtal) at cut 25 ff vcxo tuning range f xtal = 13.5mhz; c l = 14pf; c mot = 25ff 300 ppm vcxo tuning characteristic note: positive d f for positive d v 100 ppm/v crystal drive level r xtal =20 ohm; c l = 14pf 200 uw clock output (clk) high-level output source current * i oh v o = 2.0v ma low-level output sink current * i ol v o = 0.4v ma z oh v o = 0.1v dd ; output driving high output impedance * z ol v o = 0.1v dd ; output driving low w short circuit source current * i osh v o = 0v; shorted for 30s, max. ma short circuit sink current * i osl v o = 5v; shorted for 30s, max. ma table 6: ac timing specifications unless otherwise stated, v dd = 5v 10%, no load on any output, and ambient temperature range t a = 0c to 70c. parameters denoted with an asterisk ( * ) represent nominal characterization data and are not production tested to any specific limits. where given, min and max characterization data are 3 s from typical. parameter symbol conditions/description clock (mhz) min. typ. max. units clock outputs (clkx) duty cycle * t hi / t clk ; measured at v dd /2 45 55 % jitter, absolute period (pk-pk) * t j( d p) from rising edge to next rising edge at v dd /2, c l = 10pf 300 ps jitter, rms long term ( s y ( t )) * t j(lt) from 0-500 m s at v dd /2, c l = 10pf compared to ideal clock source 150 ps rise time * t r v dd = 5v; v o = 0.5v to 4.5v; c l = 10pf ns fall time * t f v dd = 5v; v o = 4.5v to 0.5v; c l = 10pf ns output frequency synthesis error (unless otherwise noted in frequency table) 0 ppm vcxo stabilization time * t vcxostb from power valid 10 ms pll stabilization time * t pllstb from vcxo stable 500 us
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t february 1999 5 2.4.99 $gydqfh,qirupdwlrq )6 9&;2&orfn*hqhudwru,& ,62 5.0 package information table 7: 8-pin soic (0.150") package dimensions dimensions inches millimeters min. max. min. max. a 0.061 0.068 1.55 1.73 a1 0.004 0.0098 0.102 0.249 a2 0.055 0.061 1.40 1.55 b 0.013 0.019 0.33 0.49 c 0.0075 0.0098 0.191 0.249 d 0.189 0.196 4.80 4.98 e 0.150 0.157 3.81 3.99 e 0.050 bsc 1.27 bsc h 0.230 0.244 5.84 6.20 h 0.010 0.016 0.25 0.41 l 0.016 0.035 0.41 0.89 q 0 8 0 8 b d a 1 seating plane h e 8 1 all radii: 0.005" to 0.01" base plane a 2 e
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t a r c l q 7 typ. h x 45 table 8: 8-pin soic (0.150") package characteristics parameter symbol conditions/description typ. units thermal impedance, junction to free-air 8-pin 0.150 soic q ja air flow = 0 m/s 110 c/w corner lead 2.0 lead inductance, self l 11 center lead 1.6 nh lead inductance, mutual l 12 any lead to any adjacent lead 0.4 nh lead capacitance, bulk c 11 any lead to v ss 0.27 pf
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t february 1999 6 2.4.99 )6 9 &;2 &orfn*hqhudwru,& $gydqfh,qirupdwlrq ,62 6.0 ordering information ordering code device number package type operating temperature range shipping configuration 11640-803 FS6127-01 8-pin (0.150) soic (small outline package) 0 c to 70 c (commercial) tape and reel 11640-813 FS6127-01 8-pin (0.150) soic (small outline package) 0 c to 70 c (commercial) tubes copyright ? 1998 american microsystems, inc. devices sold by ami are covered by the warranty and patent indemnification provisions appearing in its terms of sale only. ami makes no warranty, express, statutory implied or by description, regarding the information set forth herein or regarding the fr eedom of the described devices from patent infringement. ami makes no warranty of merchantability or fitness for any purposes. ami re - serves the right to discontinue production and change specifications and prices at any time and without notice. amis products are intended for use in commercial applications. applications requiring extended temperature range, unusual environmental require- ments, or high reliability applications, such as military, medical life-support or life-sustaining equipment, are specifically not recom- mended without additional processing by ami for such applications. american microsystems, inc., 2300 buckskin rd., pocatello, id 83201, (208) 233-4690, fax (208) 234-6796, www address: http://www.amis.com e-mail: tgp@amis.com
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